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Home > Products > Discrete Semiconductor Products > Transistors - FETs, MOSFETs - Arrays > SI5509DC-T1-GE3

SI5509DC-T1-GE3

SI5509DC-T1-GE3

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Part Number	SI5509DC-T1-GE3
Manufacturer	Electro-Films (EFI) / Vishay
Description	MOSFET N/P-CH 20V 6.1A 1206-8
Lead Free Status / RoHS Status	Lead free / RoHS Compliant

~~In Stock~~ 4873 pcs
Reference Price (In US Dollars)	Get a quote

Product parameter
Data sheet

Product parameter

Part Number	SI5509DC-T1-GE3	Manufacturer	Electro-Films (EFI) / Vishay
Description	MOSFET N/P-CH 20V 6.1A 1206-8	Lead Free Status / RoHS Status	Lead free / RoHS Compliant
Quantity Available	4873 pcs	Data sheet	SI5509DC
Category	Discrete Semiconductor Products	Vgs(th) (Max) @ Id	2V @ 250µA
Supplier Device Package	1206-8 ChipFET™	Series	TrenchFET®
Rds On (Max) @ Id, Vgs	52 mOhm @ 5A, 4.5V	Power - Max	4.5W
Packaging	Tape & Reel (TR)	Package / Case	8-SMD, Flat Lead
Operating Temperature	-55°C ~ 150°C (TJ)	Mounting Type	Surface Mount
Moisture Sensitivity Level (MSL)	1 (Unlimited)	Lead Free Status / RoHS Status	Lead free / RoHS Compliant
Input Capacitance (Ciss) (Max) @ Vds	455pF @ 10V	Gate Charge (Qg) (Max) @ Vgs	6.6nC @ 5V
FET Type	N and P-Channel	FET Feature	Logic Level Gate
Drain to Source Voltage (Vdss)	20V	Detailed Description	Mosfet Array N and P-Channel 20V 6.1A, 4.8A 4.5W Surface Mount 1206-8 ChipFET™
Current - Continuous Drain (Id) @ 25°C	6.1A, 4.8A	Base Part Number	SI5509

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