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Home > Products > Discrete Semiconductor Products > Transistors - FETs, MOSFETs - Arrays > SI5511DC-T1-GE3

SI5511DC-T1-GE3

SI5511DC-T1-GE3

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Part Number	SI5511DC-T1-GE3
Manufacturer	Electro-Films (EFI) / Vishay
Description	MOSFET N/P-CH 30V 4A 1206-8
Lead Free Status / RoHS Status	Lead free / RoHS Compliant

~~In Stock~~ 5857 pcs
Reference Price (In US Dollars)	Get a quote

Product parameter
Data sheet

Product parameter

Part Number	SI5511DC-T1-GE3	Manufacturer	Electro-Films (EFI) / Vishay
Description	MOSFET N/P-CH 30V 4A 1206-8	Lead Free Status / RoHS Status	Lead free / RoHS Compliant
Quantity Available	5857 pcs	Data sheet	SI5511DC
Category	Discrete Semiconductor Products	Vgs(th) (Max) @ Id	2V @ 250µA
Supplier Device Package	1206-8 ChipFET™	Series	TrenchFET®
Rds On (Max) @ Id, Vgs	55 mOhm @ 4.8A, 4.5V	Power - Max	3.1W, 2.6W
Packaging	Tape & Reel (TR)	Package / Case	8-SMD, Flat Lead
Other Names	SI5511DC-T1-GE3TR	Operating Temperature	-55°C ~ 150°C (TJ)
Mounting Type	Surface Mount	Moisture Sensitivity Level (MSL)	1 (Unlimited)
Lead Free Status / RoHS Status	Lead free / RoHS Compliant	Input Capacitance (Ciss) (Max) @ Vds	435pF @ 15V
Gate Charge (Qg) (Max) @ Vgs	7.1nC @ 5V	FET Type	N and P-Channel
FET Feature	Logic Level Gate	Drain to Source Voltage (Vdss)	30V
Detailed Description	Mosfet Array N and P-Channel 30V 4A, 3.6A 3.1W, 2.6W Surface Mount 1206-8 ChipFET™	Current - Continuous Drain (Id) @ 25°C	4A, 3.6A
Base Part Number	SI5511

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