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Home > Products > Discrete Semiconductor Products > Transistors - FETs, MOSFETs - Single > SI5499DC-T1-E3

SI5499DC-T1-E3

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Part Number	SI5499DC-T1-E3
Manufacturer	Electro-Films (EFI) / Vishay
Description	MOSFET P-CH 8V 6A 1206-8
Lead Free Status / RoHS Status	Lead free / RoHS Compliant

~~In Stock~~ 5112 pcs
Reference Price (In US Dollars)	Get a quote

Product parameter
Data sheet

Product parameter

Part Number	SI5499DC-T1-E3	Manufacturer	Electro-Films (EFI) / Vishay
Description	MOSFET P-CH 8V 6A 1206-8	Lead Free Status / RoHS Status	Lead free / RoHS Compliant
Quantity Available	5112 pcs	Data sheet	SI5499DC
Category	Discrete Semiconductor Products	Vgs(th) (Max) @ Id	800mV @ 250µA
Vgs (Max)	±5V	Technology	MOSFET (Metal Oxide)
Supplier Device Package	1206-8 ChipFET™	Series	TrenchFET®
Rds On (Max) @ Id, Vgs	36 mOhm @ 5.1A, 4.5V	Power Dissipation (Max)	2.5W (Ta), 6.2W (Tc)
Packaging	Cut Tape (CT)	Package / Case	8-SMD, Flat Lead
Other Names	SI5499DC-T1-E3CT SI5499DCT1E3	Operating Temperature	-55°C ~ 150°C (TJ)
Mounting Type	Surface Mount	Moisture Sensitivity Level (MSL)	1 (Unlimited)
Lead Free Status / RoHS Status	Lead free / RoHS Compliant	Input Capacitance (Ciss) (Max) @ Vds	1290pF @ 4V
Gate Charge (Qg) (Max) @ Vgs	35nC @ 8V	FET Type	P-Channel
FET Feature	-	Drive Voltage (Max Rds On, Min Rds On)	1.5V, 4.5V
Drain to Source Voltage (Vdss)	8V	Detailed Description	P-Channel 8V 6A (Tc) 2.5W (Ta), 6.2W (Tc) Surface Mount 1206-8 ChipFET™
Current - Continuous Drain (Id) @ 25°C	6A (Tc)

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