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Home > Products > Discrete Semiconductor Products > Transistors - Bipolar (BJT) - Single > MJE803STU

MJE803STU

MJE803STU
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Part Number MJE803STU
Manufacturer AMI Semiconductor / ON Semiconductor
Description TRANS NPN DARL 80V 4A TO126
Lead Free Status / RoHS Status Lead free / RoHS Compliant
In Stock 4916 pcs
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Part Number MJE803STU Manufacturer AMI Semiconductor / ON Semiconductor
Description TRANS NPN DARL 80V 4A TO126 Lead Free Status / RoHS Status Lead free / RoHS Compliant
Quantity Available 4916 pcs Data sheet MJE800-MJE803
Category Discrete Semiconductor Products Voltage - Collector Emitter Breakdown (Max) 80V
Vce Saturation (Max) @ Ib, Ic 2.8V @ 40mA, 2A Transistor Type NPN - Darlington
Supplier Device Package TO-126 Series -
Power - Max 40W Packaging Tube
Package / Case TO-225AA, TO-126-3 Operating Temperature 150°C (TJ)
Mounting Type Through Hole Moisture Sensitivity Level (MSL) 1 (Unlimited)
Lead Free Status / RoHS Status Lead free / RoHS Compliant Frequency - Transition -
Detailed Description Bipolar (BJT) Transistor NPN - Darlington 80V 4A 40W Through Hole TO-126 DC Current Gain (hFE) (Min) @ Ic, Vce 750 @ 2A, 3V
Current - Collector Cutoff (Max) 100µA Current - Collector (Ic) (Max) 4A
Base Part Number MJE803

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