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Home > Products > Discrete Semiconductor Products > Transistors - Bipolar (BJT) - Single > MJE800STU

MJE800STU

MJE800STU
OMRON AUTOMATION & SAFETYImages are for reference only.
See Product Specifications for product details.
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Part Number MJE800STU
Manufacturer AMI Semiconductor / ON Semiconductor
Description TRANS NPN DARL 60V 4A TO126
Lead Free Status / RoHS Status Lead free / RoHS Compliant
In Stock 227529 pcs
Reference Price
(In US Dollars)		1 pcs10 pcs100 pcs500 pcs1000 pcs
$0.218$0.192$0.147$0.117$0.093

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$0.218

Product parameter

Part Number MJE800STU Manufacturer AMI Semiconductor / ON Semiconductor
Description TRANS NPN DARL 60V 4A TO126 Lead Free Status / RoHS Status Lead free / RoHS Compliant
Quantity Available 227529 pcs Data sheet MJE800-MJE803
Category Discrete Semiconductor Products Voltage - Collector Emitter Breakdown (Max) 60V
Vce Saturation (Max) @ Ib, Ic 2.5V @ 30mA, 1.5A Transistor Type NPN - Darlington
Supplier Device Package TO-126 Series -
Power - Max 40W Packaging Tube
Package / Case TO-225AA, TO-126-3 Other Names MJE800STU-ND
MJE800STUFS
Operating Temperature 150°C (TJ) Mounting Type Through Hole
Moisture Sensitivity Level (MSL) 1 (Unlimited) Manufacturer Standard Lead Time 19 Weeks
Lead Free Status / RoHS Status Lead free / RoHS Compliant Frequency - Transition -
Detailed Description Bipolar (BJT) Transistor NPN - Darlington 60V 4A 40W Through Hole TO-126 DC Current Gain (hFE) (Min) @ Ic, Vce 750 @ 1.5A, 3V
Current - Collector Cutoff (Max) 100µA Current - Collector (Ic) (Max) 4A
Base Part Number MJE800

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