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Home > Products > Discrete Semiconductor Products > Transistors - Bipolar (BJT) - Single > MJE5851G

MJE5851G

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Part Number	MJE5851G
Manufacturer	AMI Semiconductor / ON Semiconductor
Description	TRANS PNP 350V 8A TO220AB
Lead Free Status / RoHS Status	Lead free / RoHS Compliant

~~In Stock~~ 67220 pcs
Reference Price (In US Dollars)	1 pcs	50 pcs	100 pcs	500 pcs	1000 pcs
Reference Price (In US Dollars)	$1.096	$0.929	$0.791	$0.65	$0.539

Product parameter
Data sheet

Product parameter

Part Number	MJE5851G	Manufacturer	AMI Semiconductor / ON Semiconductor
Description	TRANS PNP 350V 8A TO220AB	Lead Free Status / RoHS Status	Lead free / RoHS Compliant
Quantity Available	67220 pcs	Data sheet	MJE5850,1,2
Category	Discrete Semiconductor Products	Voltage - Collector Emitter Breakdown (Max)	350V
Vce Saturation (Max) @ Ib, Ic	5V @ 3A, 8A	Transistor Type	PNP
Supplier Device Package	TO-220AB	Series	SWITCHMODE™
Power - Max	80W	Packaging	Tube
Package / Case	TO-220-3	Other Names	MJE5851GOS
Operating Temperature	-65°C ~ 150°C (TJ)	Mounting Type	Through Hole
Moisture Sensitivity Level (MSL)	1 (Unlimited)	Manufacturer Standard Lead Time	2 Weeks
Lead Free Status / RoHS Status	Lead free / RoHS Compliant	Frequency - Transition	-
Detailed Description	Bipolar (BJT) Transistor PNP 350V 8A 80W Through Hole TO-220AB	DC Current Gain (hFE) (Min) @ Ic, Vce	5 @ 5A, 5V
Current - Collector Cutoff (Max)	-	Current - Collector (Ic) (Max)	8A

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