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Home > Products > Discrete Semiconductor Products > Transistors - Bipolar (BJT) - Single > MJE800G

MJE800G

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Part Number	MJE800G
Manufacturer	AMI Semiconductor / ON Semiconductor
Description	TRANS NPN DARL 60V 4A TO225AA
Lead Free Status / RoHS Status	Lead free / RoHS Compliant

~~In Stock~~ 241539 pcs
Reference Price (In US Dollars)	1 pcs	10 pcs	100 pcs	500 pcs	1000 pcs
Reference Price (In US Dollars)	$0.213	$0.181	$0.135	$0.106	$0.082

Product parameter
Data sheet

Product parameter

Part Number	MJE800G	Manufacturer	AMI Semiconductor / ON Semiconductor
Description	TRANS NPN DARL 60V 4A TO225AA	Lead Free Status / RoHS Status	Lead free / RoHS Compliant
Quantity Available	241539 pcs	Data sheet	MJE700-703,800-803
Category	Discrete Semiconductor Products	Voltage - Collector Emitter Breakdown (Max)	60V
Vce Saturation (Max) @ Ib, Ic	2.5V @ 30mA, 1.5A	Transistor Type	NPN - Darlington
Supplier Device Package	TO-225AA	Series	-
Power - Max	40W	Packaging	Bulk
Package / Case	TO-225AA, TO-126-3	Other Names	MJE800GOS
Operating Temperature	-55°C ~ 150°C (TJ)	Mounting Type	Through Hole
Moisture Sensitivity Level (MSL)	1 (Unlimited)	Manufacturer Standard Lead Time	2 Weeks
Lead Free Status / RoHS Status	Lead free / RoHS Compliant	Frequency - Transition	-
Detailed Description	Bipolar (BJT) Transistor NPN - Darlington 60V 4A 40W Through Hole TO-225AA	DC Current Gain (hFE) (Min) @ Ic, Vce	750 @ 1.5A, 3V
Current - Collector Cutoff (Max)	100µA	Current - Collector (Ic) (Max)	4A
Base Part Number	MJE800

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