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Home > Products > Discrete Semiconductor Products > Transistors - Bipolar (BJT) - Single > MJE803

MJE803

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Part Number	MJE803
Manufacturer	AMI Semiconductor / ON Semiconductor
Description	TRANS NPN DARL 80V 4A TO225AA
Lead Free Status / RoHS Status	Contains lead / RoHS non-compliant

~~In Stock~~ 4037 pcs
Reference Price (In US Dollars)	Get a quote

Product parameter
Data sheet

Product parameter

Part Number	MJE803	Manufacturer	AMI Semiconductor / ON Semiconductor
Description	TRANS NPN DARL 80V 4A TO225AA	Lead Free Status / RoHS Status	Contains lead / RoHS non-compliant
Quantity Available	4037 pcs	Data sheet	MJE700-703,800-803
Category	Discrete Semiconductor Products	Voltage - Collector Emitter Breakdown (Max)	80V
Vce Saturation (Max) @ Ib, Ic	2.8V @ 40mA, 2A	Transistor Type	NPN - Darlington
Supplier Device Package	TO-225AA	Series	-
Power - Max	40W	Packaging	Bulk
Package / Case	TO-225AA, TO-126-3	Other Names	MJE803OS
Operating Temperature	-55°C ~ 150°C (TJ)	Mounting Type	Through Hole
Moisture Sensitivity Level (MSL)	1 (Unlimited)	Lead Free Status / RoHS Status	Contains lead / RoHS non-compliant
Frequency - Transition	-	Detailed Description	Bipolar (BJT) Transistor NPN - Darlington 80V 4A 40W Through Hole TO-225AA
DC Current Gain (hFE) (Min) @ Ic, Vce	750 @ 2A, 3V	Current - Collector Cutoff (Max)	100µA
Current - Collector (Ic) (Max)	4A	Base Part Number	MJE803

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