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Home > Products > Discrete Semiconductor Products > Transistors - FETs, MOSFETs - Single > TPH2R506PL,L1Q

TPH2R506PL,L1Q

TPH2R506PL,L1Q
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Part Number TPH2R506PL,L1Q
Manufacturer Toshiba Semiconductor and Storage
Description X35 PB-F POWER MOSFET TRANSISTOR
Lead Free Status / RoHS Status Lead free / RoHS Compliant
In Stock 94816 pcs
Reference Price
(In US Dollars)
5000 pcs
$0.377

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Quantity:
Total:
$0.377

Product parameter

Part Number TPH2R506PL,L1Q Manufacturer Toshiba Semiconductor and Storage
Description X35 PB-F POWER MOSFET TRANSISTOR Lead Free Status / RoHS Status Lead free / RoHS Compliant
Quantity Available 94816 pcs Data sheet TPH2R506PL
Category Discrete Semiconductor Products Vgs(th) (Max) @ Id 2.5V @ 500µA
Vgs (Max) ±20V Technology MOSFET (Metal Oxide)
Supplier Device Package 8-SOP Advance (5x5) Series U-MOSIX-H
Rds On (Max) @ Id, Vgs 4.4 mOhm @ 30A, 4.5V Power Dissipation (Max) 132W (Tc)
Packaging Tape & Reel (TR) Package / Case 8-PowerVDFN
Other Names TPH2R506PL,L1Q(M
TPH2R506PLL1Q
TPH2R506PLL1QTR
Operating Temperature 175°C (TJ)
Mounting Type Surface Mount Lead Free Status / RoHS Status Lead free / RoHS Compliant
Input Capacitance (Ciss) (Max) @ Vds 5435pF @ 30V Gate Charge (Qg) (Max) @ Vgs 60nC @ 10V
FET Type N-Channel FET Feature -
Drive Voltage (Max Rds On, Min Rds On) 4.5V, 10V Drain to Source Voltage (Vdss) 60V
Detailed Description N-Channel 60V 100A (Tc) 132W (Tc) Surface Mount 8-SOP Advance (5x5) Current - Continuous Drain (Id) @ 25°C 100A (Tc)

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