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Home > Products > Discrete Semiconductor Products > Transistors - FETs, MOSFETs - Single > TPH2010FNH,L1Q

TPH2010FNH,L1Q

TPH2010FNH,L1Q
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Part Number TPH2010FNH,L1Q
Manufacturer Toshiba Semiconductor and Storage
Description MOSFET N-CH 250V 5.6A 8SOP
Lead Free Status / RoHS Status Lead free / RoHS Compliant
In Stock 98937 pcs
Reference Price
(In US Dollars)
5000 pcs
$0.235

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Quantity:
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$0.235

Product parameter

Part Number TPH2010FNH,L1Q Manufacturer Toshiba Semiconductor and Storage
Description MOSFET N-CH 250V 5.6A 8SOP Lead Free Status / RoHS Status Lead free / RoHS Compliant
Quantity Available 98937 pcs Data sheet TPH2010FNH
Category Discrete Semiconductor Products Vgs(th) (Max) @ Id 4V @ 200µA
Vgs (Max) ±20V Technology MOSFET (Metal Oxide)
Supplier Device Package 8-SOP Advance (5x5) Series U-MOSVIII-H
Rds On (Max) @ Id, Vgs 198 mOhm @ 2.8A, 10V Power Dissipation (Max) 1.6W (Ta), 42W (Tc)
Packaging Tape & Reel (TR) Package / Case 8-PowerVDFN
Other Names TPH2010FNH,L1Q(M
TPH2010FNHL1QTR
Operating Temperature 150°C (TJ)
Mounting Type Surface Mount Moisture Sensitivity Level (MSL) 1 (Unlimited)
Lead Free Status / RoHS Status Lead free / RoHS Compliant Input Capacitance (Ciss) (Max) @ Vds 600pF @ 100V
Gate Charge (Qg) (Max) @ Vgs 7nC @ 10V FET Type N-Channel
FET Feature - Drive Voltage (Max Rds On, Min Rds On) 10V
Drain to Source Voltage (Vdss) 250V Detailed Description N-Channel 250V 5.6A (Ta) 1.6W (Ta), 42W (Tc) Surface Mount 8-SOP Advance (5x5)
Current - Continuous Drain (Id) @ 25°C 5.6A (Ta)

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