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Home > Products > Discrete Semiconductor Products > Transistors - Bipolar (BJT) - Single, Pre-Biased > RN1115MFV,L3F

RN1115MFV,L3F

RN1115MFV,L3F
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Part Number RN1115MFV,L3F
Manufacturer Toshiba Semiconductor and Storage
Description TRANS PREBIAS NPN 50V SOT723
Lead Free Status / RoHS Status Lead free / RoHS Compliant
In Stock 3068418 pcs
Reference Price
(In US Dollars)
8000 pcs16000 pcs
$0.009$0.008

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Part Number RN1115MFV,L3F Manufacturer Toshiba Semiconductor and Storage
Description TRANS PREBIAS NPN 50V SOT723 Lead Free Status / RoHS Status Lead free / RoHS Compliant
Quantity Available 3068418 pcs Data sheet RN1114-18MFV
Category Discrete Semiconductor Products Voltage - Collector Emitter Breakdown (Max) 50V
Vce Saturation (Max) @ Ib, Ic 300mV @ 250µA, 5mA Transistor Type NPN - Pre-Biased
Supplier Device Package VESM Series -
Resistor - Emitter Base (R2) 10 kOhms Resistor - Base (R1) 2.2 kOhms
Power - Max 150mW Packaging Tape & Reel (TR)
Package / Case SOT-723 Other Names RN1115MFV,L3F(B
RN1115MFV,L3F(T
RN1115MFVL3FTR
Mounting Type Surface Mount Moisture Sensitivity Level (MSL) 1 (Unlimited)
Lead Free Status / RoHS Status Lead free / RoHS Compliant Frequency - Transition 250MHz
Detailed Description Pre-Biased Bipolar Transistor (BJT) NPN - Pre-Biased 50V 100mA 250MHz 150mW Surface Mount VESM DC Current Gain (hFE) (Min) @ Ic, Vce 50 @ 10mA, 5V
Current - Collector Cutoff (Max) 500nA Current - Collector (Ic) (Max) 100mA

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