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Home > Products > Discrete Semiconductor Products > Transistors - Bipolar (BJT) - Single, Pre-Biased > DTD513ZMT2L

DTD513ZMT2L

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Part Number	DTD513ZMT2L
Manufacturer	LAPIS Semiconductor
Description	TRANS PREBIAS NPN 150MW VMT3
Lead Free Status / RoHS Status	Lead free / RoHS Compliant

~~In Stock~~ 868854 pcs
Reference Price (In US Dollars)	8000 pcs
Reference Price (In US Dollars)	$0.029

Product parameter
Data sheet

Product parameter

Part Number	DTD513ZMT2L	Manufacturer	LAPIS Semiconductor
Description	TRANS PREBIAS NPN 150MW VMT3	Lead Free Status / RoHS Status	Lead free / RoHS Compliant
Quantity Available	868854 pcs	Data sheet	VMT3 T2L Taping Spec DTD513ZE,ZM
Category	Discrete Semiconductor Products	Voltage - Collector Emitter Breakdown (Max)	12V
Vce Saturation (Max) @ Ib, Ic	300mV @ 5mA, 100mA	Transistor Type	NPN - Pre-Biased
Supplier Device Package	VMT3	Series	-
Resistor - Emitter Base (R2)	10 kOhms	Resistor - Base (R1)	1 kOhms
Power - Max	150mW	Packaging	Tape & Reel (TR)
Package / Case	SOT-723	Mounting Type	Surface Mount
Moisture Sensitivity Level (MSL)	1 (Unlimited)	Manufacturer Standard Lead Time	10 Weeks
Lead Free Status / RoHS Status	Lead free / RoHS Compliant	Frequency - Transition	260MHz
Detailed Description	Pre-Biased Bipolar Transistor (BJT) NPN - Pre-Biased 12V 500mA 260MHz 150mW Surface Mount VMT3	DC Current Gain (hFE) (Min) @ Ic, Vce	140 @ 100mA, 2V
Current - Collector Cutoff (Max)	500nA	Current - Collector (Ic) (Max)	500mA

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