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Home > Products > Discrete Semiconductor Products > Transistors - FETs, MOSFETs - Single > IPI045N10N3GXK

IPI045N10N3GXK

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Part Number IPI045N10N3GXK
Manufacturer International Rectifier (Infineon Technologies)
Description MOSFET N-CH 100V 100A TO262-3
Lead Free Status / RoHS Status Lead free / RoHS Compliant
In Stock 4479 pcs
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Part Number IPI045N10N3GXK Manufacturer International Rectifier (Infineon Technologies)
Description MOSFET N-CH 100V 100A TO262-3 Lead Free Status / RoHS Status Lead free / RoHS Compliant
Quantity Available 4479 pcs Data sheet
Category Discrete Semiconductor Products Vgs(th) (Max) @ Id 3.5V @ 150µA
Vgs (Max) ±20V Technology MOSFET (Metal Oxide)
Supplier Device Package PG-TO262-3 Series OptiMOS™ 3
Rds On (Max) @ Id, Vgs 4.5 mOhm @ 100A, 10V Power Dissipation (Max) 214W (Tc)
Package / Case TO-262-3 Long Leads, I²Pak, TO-262AA Other Names SP000482424
Operating Temperature -55°C ~ 175°C (TJ) Mounting Type Through Hole
Moisture Sensitivity Level (MSL) 3 (168 Hours) Lead Free Status / RoHS Status Lead free / RoHS Compliant
Input Capacitance (Ciss) (Max) @ Vds 8410pF @ 50V Gate Charge (Qg) (Max) @ Vgs 117nC @ 10V
FET Type N-Channel FET Feature -
Drive Voltage (Max Rds On, Min Rds On) 6V, 10V Drain to Source Voltage (Vdss) 100V
Detailed Description N-Channel 100V 137A (Tc) 214W (Tc) Through Hole PG-TO262-3 Current - Continuous Drain (Id) @ 25°C 137A (Tc)

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