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Home > Products > Discrete Semiconductor Products > Transistors - FETs, MOSFETs - Single > IPI034NE7N3 G

IPI034NE7N3 G

IPI034NE7N3 G
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Part Number IPI034NE7N3 G
Manufacturer International Rectifier (Infineon Technologies)
Description MOSFET N-CH 75V 100A TO262-3
Lead Free Status / RoHS Status Lead free / RoHS Compliant
In Stock 5014 pcs
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Part Number IPI034NE7N3 G Manufacturer International Rectifier (Infineon Technologies)
Description MOSFET N-CH 75V 100A TO262-3 Lead Free Status / RoHS Status Lead free / RoHS Compliant
Quantity Available 5014 pcs Data sheet
Category Discrete Semiconductor Products Vgs(th) (Max) @ Id 3.8V @ 155µA
Technology MOSFET (Metal Oxide) Supplier Device Package PG-TO262-3
Series OptiMOS™ Rds On (Max) @ Id, Vgs 3.4 mOhm @ 100A, 10V
Power Dissipation (Max) 214W (Tc) Packaging Tube
Package / Case TO-262-3 Long Leads, I²Pak, TO-262AA Other Names IPI034NE7N3 G-ND
IPI034NE7N3G
Operating Temperature -55°C ~ 175°C (TJ) Mounting Type Through Hole
Moisture Sensitivity Level (MSL) 1 (Unlimited) Lead Free Status / RoHS Status Lead free / RoHS Compliant
Input Capacitance (Ciss) (Max) @ Vds 8130pF @ 37.5V Gate Charge (Qg) (Max) @ Vgs 117nC @ 10V
FET Type N-Channel FET Feature -
Drain to Source Voltage (Vdss) 75V Detailed Description N-Channel 75V 100A (Tc) 214W (Tc) Through Hole PG-TO262-3
Current - Continuous Drain (Id) @ 25°C 100A (Tc)

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