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Home > Products > Discrete Semiconductor Products > Transistors - FETs, MOSFETs - Single > IPI041N12N3GAKSA1

IPI041N12N3GAKSA1

IPI041N12N3GAKSA1
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Part Number IPI041N12N3GAKSA1
Manufacturer International Rectifier (Infineon Technologies)
Description MOSFET N-CH 120V 120A TO262-3
Lead Free Status / RoHS Status Lead free / RoHS Compliant
In Stock 29454 pcs
Reference Price
(In US Dollars)
500 pcs
$1.269

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Quantity:
Total:
$1.269

Product parameter

Part Number IPI041N12N3GAKSA1 Manufacturer International Rectifier (Infineon Technologies)
Description MOSFET N-CH 120V 120A TO262-3 Lead Free Status / RoHS Status Lead free / RoHS Compliant
Quantity Available 29454 pcs Data sheet IPx041N12N3 G, IPB038N12N3 G
Category Discrete Semiconductor Products Vgs(th) (Max) @ Id 4V @ 270µA
Vgs (Max) ±20V Technology MOSFET (Metal Oxide)
Supplier Device Package PG-TO262-3 Series OptiMOS™
Rds On (Max) @ Id, Vgs 4.1 mOhm @ 100A, 10V Power Dissipation (Max) 300W (Tc)
Packaging Tube Package / Case TO-262-3 Long Leads, I²Pak, TO-262AA
Other Names IPI041N12N3 G
IPI041N12N3 G-ND
IPI041N12N3G
SP000652748
Operating Temperature -55°C ~ 175°C (TJ)
Mounting Type Through Hole Moisture Sensitivity Level (MSL) 1 (Unlimited)
Lead Free Status / RoHS Status Lead free / RoHS Compliant Input Capacitance (Ciss) (Max) @ Vds 13800pF @ 60V
Gate Charge (Qg) (Max) @ Vgs 211nC @ 10V FET Type N-Channel
FET Feature - Drive Voltage (Max Rds On, Min Rds On) 10V
Drain to Source Voltage (Vdss) 120V Detailed Description N-Channel 120V 120A (Tc) 300W (Tc) Through Hole PG-TO262-3
Current - Continuous Drain (Id) @ 25°C 120A (Tc)

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