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Home > Products > Discrete Semiconductor Products > Transistors - FETs, MOSFETs - Single > IPI057N08N3 G

IPI057N08N3 G

IPI057N08N3 G
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Part Number IPI057N08N3 G
Manufacturer International Rectifier (Infineon Technologies)
Description MOSFET N-CH 80V 80A TO262-3
Lead Free Status / RoHS Status Lead free / RoHS Compliant
In Stock 5431 pcs
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Part Number IPI057N08N3 G Manufacturer International Rectifier (Infineon Technologies)
Description MOSFET N-CH 80V 80A TO262-3 Lead Free Status / RoHS Status Lead free / RoHS Compliant
Quantity Available 5431 pcs Data sheet IPx054,57N08N3 G
Category Discrete Semiconductor Products Vgs(th) (Max) @ Id 3.5V @ 90µA
Vgs (Max) ±20V Technology MOSFET (Metal Oxide)
Supplier Device Package PG-TO262-3 Series OptiMOS™
Rds On (Max) @ Id, Vgs 5.7 mOhm @ 80A, 10V Power Dissipation (Max) 150W (Tc)
Packaging Tube Package / Case TO-262-3 Long Leads, I²Pak, TO-262AA
Other Names IPI057N08N3 G-ND
IPI057N08N3G
SP000395182
SP000680662
Operating Temperature -55°C ~ 175°C (TJ)
Mounting Type Through Hole Moisture Sensitivity Level (MSL) 1 (Unlimited)
Lead Free Status / RoHS Status Lead free / RoHS Compliant Input Capacitance (Ciss) (Max) @ Vds 4750pF @ 40V
Gate Charge (Qg) (Max) @ Vgs 69nC @ 10V FET Type N-Channel
FET Feature - Drive Voltage (Max Rds On, Min Rds On) 6V, 10V
Drain to Source Voltage (Vdss) 80V Detailed Description N-Channel 80V 80A (Tc) 150W (Tc) Through Hole PG-TO262-3
Current - Continuous Drain (Id) @ 25°C 80A (Tc)

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