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Home > Products > Discrete Semiconductor Products > Transistors - FETs, MOSFETs - Single > IPB041N04NGATMA1

IPB041N04NGATMA1

IPB041N04NGATMA1
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Part Number IPB041N04NGATMA1
Manufacturer International Rectifier (Infineon Technologies)
Description MOSFET N-CH 40V 80A TO263-3
Lead Free Status / RoHS Status Lead free / RoHS Compliant
In Stock 6027 pcs
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Part Number IPB041N04NGATMA1 Manufacturer International Rectifier (Infineon Technologies)
Description MOSFET N-CH 40V 80A TO263-3 Lead Free Status / RoHS Status Lead free / RoHS Compliant
Quantity Available 6027 pcs Data sheet IPB,IPP041N04N G
Category Discrete Semiconductor Products Vgs(th) (Max) @ Id 4V @ 45µA
Vgs (Max) ±20V Technology MOSFET (Metal Oxide)
Supplier Device Package D²PAK (TO-263AB) Series OptiMOS™
Rds On (Max) @ Id, Vgs 4.1 mOhm @ 80A, 10V Power Dissipation (Max) 94W (Tc)
Packaging Cut Tape (CT) Package / Case TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
Other Names IPB041N04N GCT
IPB041N04N GCT-ND
IPB041N04NG
IPB041N04NGATMA1CT
Operating Temperature -55°C ~ 175°C (TJ)
Mounting Type Surface Mount Moisture Sensitivity Level (MSL) 1 (Unlimited)
Lead Free Status / RoHS Status Lead free / RoHS Compliant Input Capacitance (Ciss) (Max) @ Vds 4500pF @ 20V
Gate Charge (Qg) (Max) @ Vgs 56nC @ 10V FET Type N-Channel
FET Feature - Drive Voltage (Max Rds On, Min Rds On) 10V
Drain to Source Voltage (Vdss) 40V Detailed Description N-Channel 40V 80A (Tc) 94W (Tc) Surface Mount D²PAK (TO-263AB)
Current - Continuous Drain (Id) @ 25°C 80A (Tc)

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