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Home > Products > Discrete Semiconductor Products > Transistors - FETs, MOSFETs - Single > IPB038N12N3GATMA1

IPB038N12N3GATMA1

IPB038N12N3GATMA1
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Part Number IPB038N12N3GATMA1
Manufacturer International Rectifier (Infineon Technologies)
Description MOSFET N-CH 120V 120A TO263-3
Lead Free Status / RoHS Status Lead free / RoHS Compliant
In Stock 24181 pcs
Reference Price
(In US Dollars)
1 pcs10 pcs100 pcs500 pcs
$2.478$2.211$1.813$1.468

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Target Price:(USD)
Quantity:
Total:
$2.478

Product parameter

Part Number IPB038N12N3GATMA1 Manufacturer International Rectifier (Infineon Technologies)
Description MOSFET N-CH 120V 120A TO263-3 Lead Free Status / RoHS Status Lead free / RoHS Compliant
Quantity Available 24181 pcs Data sheet IPx041N12N3 G, IPB038N12N3 G
Category Discrete Semiconductor Products Vgs(th) (Max) @ Id 4V @ 270µA
Vgs (Max) ±20V Technology MOSFET (Metal Oxide)
Supplier Device Package D²PAK (TO-263AB) Series OptiMOS™
Rds On (Max) @ Id, Vgs 3.8 mOhm @ 100A, 10V Power Dissipation (Max) 300W (Tc)
Packaging Cut Tape (CT) Package / Case TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
Other Names IPB038N12N3 GCT
IPB038N12N3 GCT-ND
IPB038N12N3GATMA1CT
Operating Temperature -55°C ~ 175°C (TJ)
Mounting Type Surface Mount Moisture Sensitivity Level (MSL) 1 (Unlimited)
Lead Free Status / RoHS Status Lead free / RoHS Compliant Input Capacitance (Ciss) (Max) @ Vds 13800pF @ 60V
Gate Charge (Qg) (Max) @ Vgs 211nC @ 10V FET Type N-Channel
FET Feature - Drive Voltage (Max Rds On, Min Rds On) 10V
Drain to Source Voltage (Vdss) 120V Detailed Description N-Channel 120V 120A (Tc) 300W (Tc) Surface Mount D²PAK (TO-263AB)
Current - Continuous Drain (Id) @ 25°C 120A (Tc)

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