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Home > Products > Discrete Semiconductor Products > Transistors - FETs, MOSFETs - Single > IPB039N10N3GE8187ATMA1

IPB039N10N3GE8187ATMA1

IPB039N10N3GE8187ATMA1
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Part Number IPB039N10N3GE8187ATMA1
Manufacturer International Rectifier (Infineon Technologies)
Description MOSFET N-CH 100V 160A TO263-7
Lead Free Status / RoHS Status Lead free / RoHS Compliant
In Stock 51145 pcs
Reference Price
(In US Dollars)
1000 pcs
$0.624

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Target Price:(USD)
Quantity:
Total:
$0.624

Product parameter

Part Number IPB039N10N3GE8187ATMA1 Manufacturer International Rectifier (Infineon Technologies)
Description MOSFET N-CH 100V 160A TO263-7 Lead Free Status / RoHS Status Lead free / RoHS Compliant
Quantity Available 51145 pcs Data sheet IPB039N10N3 G
Category Discrete Semiconductor Products Vgs(th) (Max) @ Id 3.5V @ 160µA
Vgs (Max) ±20V Technology MOSFET (Metal Oxide)
Supplier Device Package PG-TO263-7 Series OptiMOS™
Rds On (Max) @ Id, Vgs 3.9 mOhm @ 100A, 10V Power Dissipation (Max) 214W (Tc)
Packaging Tape & Reel (TR) Package / Case TO-263-7, D²Pak (6 Leads + Tab), TO-263CB
Other Names IPB039N10N3 G E8187
IPB039N10N3 G E8187-ND
IPB039N10N3 G E8187TR-ND
IPB039N10N3GE8187ATMA1TR
SP000939340
Operating Temperature -55°C ~ 175°C (TJ)
Mounting Type Surface Mount Moisture Sensitivity Level (MSL) 1 (Unlimited)
Lead Free Status / RoHS Status Lead free / RoHS Compliant Input Capacitance (Ciss) (Max) @ Vds 8410pF @ 50V
Gate Charge (Qg) (Max) @ Vgs 117nC @ 10V FET Type N-Channel
FET Feature - Drive Voltage (Max Rds On, Min Rds On) 6V, 10V
Drain to Source Voltage (Vdss) 100V Detailed Description N-Channel 100V 160A (Tc) 214W (Tc) Surface Mount PG-TO263-7
Current - Continuous Drain (Id) @ 25°C 160A (Tc)

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