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Home > Products > Discrete Semiconductor Products > Transistors - FETs, MOSFETs - Single > IPB049NE7N3GATMA1

IPB049NE7N3GATMA1

IPB049NE7N3GATMA1
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Part Number IPB049NE7N3GATMA1
Manufacturer International Rectifier (Infineon Technologies)
Description MOSFET N-CH 75V 80A TO263-3
Lead Free Status / RoHS Status Lead free / RoHS Compliant
In Stock 77074 pcs
Reference Price
(In US Dollars)
1000 pcs
$0.459

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Quantity:
Total:
$0.459

Product parameter

Part Number IPB049NE7N3GATMA1 Manufacturer International Rectifier (Infineon Technologies)
Description MOSFET N-CH 75V 80A TO263-3 Lead Free Status / RoHS Status Lead free / RoHS Compliant
Quantity Available 77074 pcs Data sheet IPB049NE7N3 G
Category Discrete Semiconductor Products Vgs(th) (Max) @ Id 3.8V @ 91µA
Vgs (Max) ±20V Technology MOSFET (Metal Oxide)
Supplier Device Package D²PAK (TO-263AB) Series OptiMOS™
Rds On (Max) @ Id, Vgs 4.9 mOhm @ 80A, 10V Power Dissipation (Max) 150W (Tc)
Packaging Tape & Reel (TR) Package / Case TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
Other Names IPB049NE7N3 G
IPB049NE7N3 G-ND
IPB049NE7N3 GTR-ND
IPB049NE7N3G
IPB049NE7N3GATMA1TR
SP000641752
Operating Temperature -55°C ~ 175°C (TJ)
Mounting Type Surface Mount Moisture Sensitivity Level (MSL) 1 (Unlimited)
Lead Free Status / RoHS Status Lead free / RoHS Compliant Input Capacitance (Ciss) (Max) @ Vds 4750pF @ 37.5V
Gate Charge (Qg) (Max) @ Vgs 68nC @ 10V FET Type N-Channel
FET Feature - Drive Voltage (Max Rds On, Min Rds On) 10V
Drain to Source Voltage (Vdss) 75V Detailed Description N-Channel 75V 80A (Tc) 150W (Tc) Surface Mount D²PAK (TO-263AB)
Current - Continuous Drain (Id) @ 25°C 80A (Tc)

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