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Home > Products > Discrete Semiconductor Products > Transistors - FETs, MOSFETs - Arrays > SIZ998DT-T1-GE3

SIZ998DT-T1-GE3

SIZ998DT-T1-GE3

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Part Number	SIZ998DT-T1-GE3
Manufacturer	Electro-Films (EFI) / Vishay
Description	MOSFET 2 N-CH 30V 8-POWERPAIR
Lead Free Status / RoHS Status

~~In Stock~~ 78239 pcs
Reference Price (In US Dollars)	3000 pcs
Reference Price (In US Dollars)	$0.264

Product parameter
Data sheet

Product parameter

Part Number	SIZ998DT-T1-GE3	Manufacturer	Electro-Films (EFI) / Vishay
Description	MOSFET 2 N-CH 30V 8-POWERPAIR	Lead Free Status / RoHS Status
Quantity Available	78239 pcs	Data sheet	SIZ998DT
Category	Discrete Semiconductor Products	Vgs(th) (Max) @ Id	2.2V @ 250µA
Supplier Device Package	8-PowerPair®	Series	TrenchFET®
Rds On (Max) @ Id, Vgs	6.7 mOhm @ 15A, 10V, 2.8 mOhm @ 19A, 10V	Power - Max	20.2W, 32.9W
Packaging	Tape & Reel (TR)	Package / Case	8-PowerWDFN
Other Names	SIZ998DT-T1-GE3-ND SIZ998DT-T1-GE3TR	Operating Temperature	-55°C ~ 150°C (TJ)
Mounting Type	Surface Mount	Moisture Sensitivity Level (MSL)	1 (Unlimited)
Manufacturer Standard Lead Time	32 Weeks	Input Capacitance (Ciss) (Max) @ Vds	930pF @ 15V, 2620pF @ 15V
Gate Charge (Qg) (Max) @ Vgs	8.1nC @ 4.5V, 19.8nC @ 4.5V	FET Type	2 N-Channel (Dual), Schottky
FET Feature	Standard	Drain to Source Voltage (Vdss)	30V
Detailed Description	Mosfet Array 2 N-Channel (Dual), Schottky 30V 20A (Tc), 60A (Tc) 20.2W, 32.9W Surface Mount 8-PowerPair®	Current - Continuous Drain (Id) @ 25°C	20A (Tc), 60A (Tc)

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