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Home > Products > Discrete Semiconductor Products > Transistors - FETs, MOSFETs - Arrays > SIZ910DT-T1-GE3

SIZ910DT-T1-GE3

SIZ910DT-T1-GE3

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Part Number	SIZ910DT-T1-GE3
Manufacturer	Electro-Films (EFI) / Vishay
Description	MOSFET 2N-CH 30V 40A POWERPAIR
Lead Free Status / RoHS Status	Lead free / RoHS Compliant

~~In Stock~~ 4251 pcs
Reference Price (In US Dollars)	Get a quote

Product parameter
Data sheet

Product parameter

Part Number	SIZ910DT-T1-GE3	Manufacturer	Electro-Films (EFI) / Vishay
Description	MOSFET 2N-CH 30V 40A POWERPAIR	Lead Free Status / RoHS Status	Lead free / RoHS Compliant
Quantity Available	4251 pcs	Data sheet	SiZ901DT
Category	Discrete Semiconductor Products	Vgs(th) (Max) @ Id	2.2V @ 250µA
Supplier Device Package	8-PowerPair® (6x5)	Series	TrenchFET®
Rds On (Max) @ Id, Vgs	5.8 mOhm @ 20A, 10V	Power - Max	48W, 100W
Packaging	Cut Tape (CT)	Package / Case	8-PowerWDFN
Other Names	SIZ910DT-T1-GE3CT	Operating Temperature	-55°C ~ 150°C (TJ)
Mounting Type	Surface Mount	Moisture Sensitivity Level (MSL)	1 (Unlimited)
Lead Free Status / RoHS Status	Lead free / RoHS Compliant	Input Capacitance (Ciss) (Max) @ Vds	1500pF @ 15V
Gate Charge (Qg) (Max) @ Vgs	40nC @ 10V	FET Type	2 N-Channel (Half Bridge)
FET Feature	Logic Level Gate	Drain to Source Voltage (Vdss)	30V
Detailed Description	Mosfet Array 2 N-Channel (Half Bridge) 30V 40A 48W, 100W Surface Mount 8-PowerPair® (6x5)	Current - Continuous Drain (Id) @ 25°C	40A
Base Part Number	SIZ910

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