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Home > Products > Discrete Semiconductor Products > Transistors - FETs, MOSFETs - Single > SIE862DF-T1-GE3

SIE862DF-T1-GE3

SIE862DF-T1-GE3

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Part Number	SIE862DF-T1-GE3
Manufacturer	Electro-Films (EFI) / Vishay
Description	MOSFET N-CH 30V 50A POLARPAK
Lead Free Status / RoHS Status	Lead free / RoHS Compliant

~~In Stock~~ 5332 pcs
Reference Price (In US Dollars)	Get a quote

Product parameter
Data sheet

Product parameter

Part Number	SIE862DF-T1-GE3	Manufacturer	Electro-Films (EFI) / Vishay
Description	MOSFET N-CH 30V 50A POLARPAK	Lead Free Status / RoHS Status	Lead free / RoHS Compliant
Quantity Available	5332 pcs	Data sheet	SIE862DF
Category	Discrete Semiconductor Products	Vgs(th) (Max) @ Id	2.2V @ 250µA
Vgs (Max)	±20V	Technology	MOSFET (Metal Oxide)
Supplier Device Package	10-PolarPAK® (U)	Series	TrenchFET®
Rds On (Max) @ Id, Vgs	3.2 mOhm @ 20A, 10V	Power Dissipation (Max)	5.2W (Ta), 104W (Tc)
Packaging	Tape & Reel (TR)	Package / Case	10-PolarPAK® (U)
Operating Temperature	-55°C ~ 150°C (TJ)	Mounting Type	Surface Mount
Moisture Sensitivity Level (MSL)	1 (Unlimited)	Lead Free Status / RoHS Status	Lead free / RoHS Compliant
Input Capacitance (Ciss) (Max) @ Vds	3100pF @ 15V	Gate Charge (Qg) (Max) @ Vgs	75nC @ 10V
FET Type	N-Channel	FET Feature	-
Drive Voltage (Max Rds On, Min Rds On)	10V	Drain to Source Voltage (Vdss)	30V
Detailed Description	N-Channel 30V 50A (Tc) 5.2W (Ta), 104W (Tc) Surface Mount 10-PolarPAK® (U)	Current - Continuous Drain (Id) @ 25°C	50A (Tc)

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