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Home > Products > Discrete Semiconductor Products > Transistors - FETs, MOSFETs - Single > SIE836DF-T1-E3

SIE836DF-T1-E3

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Part Number	SIE836DF-T1-E3
Manufacturer	Electro-Films (EFI) / Vishay
Description	MOSFET N-CH 200V 18.3A POLARPAK
Lead Free Status / RoHS Status	Lead free / RoHS Compliant

~~In Stock~~ 5228 pcs
Reference Price (In US Dollars)	Get a quote

Product parameter
Data sheet

Product parameter

Part Number	SIE836DF-T1-E3	Manufacturer	Electro-Films (EFI) / Vishay
Description	MOSFET N-CH 200V 18.3A POLARPAK	Lead Free Status / RoHS Status	Lead free / RoHS Compliant
Quantity Available	5228 pcs	Data sheet	SIE836DF
Category	Discrete Semiconductor Products	Vgs(th) (Max) @ Id	4.5V @ 250µA
Vgs (Max)	±30V	Technology	MOSFET (Metal Oxide)
Supplier Device Package	10-PolarPAK® (SH)	Series	TrenchFET®
Rds On (Max) @ Id, Vgs	130 mOhm @ 4.1A, 10V	Power Dissipation (Max)	5.2W (Ta), 104W (Tc)
Packaging	Tape & Reel (TR)	Package / Case	10-PolarPAK® (SH)
Operating Temperature	-55°C ~ 150°C (TJ)	Mounting Type	Surface Mount
Moisture Sensitivity Level (MSL)	1 (Unlimited)	Lead Free Status / RoHS Status	Lead free / RoHS Compliant
Input Capacitance (Ciss) (Max) @ Vds	1200pF @ 100V	Gate Charge (Qg) (Max) @ Vgs	41nC @ 10V
FET Type	N-Channel	FET Feature	-
Drive Voltage (Max Rds On, Min Rds On)	10V	Drain to Source Voltage (Vdss)	200V
Detailed Description	N-Channel 200V 18.3A (Tc) 5.2W (Ta), 104W (Tc) Surface Mount 10-PolarPAK® (SH)	Current - Continuous Drain (Id) @ 25°C	18.3A (Tc)

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