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Home > Products > Discrete Semiconductor Products > Transistors - FETs, MOSFETs - Single > SIE830DF-T1-E3

SIE830DF-T1-E3

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Part Number	SIE830DF-T1-E3
Manufacturer	Electro-Films (EFI) / Vishay
Description	MOSFET N-CH 30V 50A 10-POLARPAK
Lead Free Status / RoHS Status	Lead free / RoHS Compliant

~~In Stock~~ 4576 pcs
Reference Price (In US Dollars)	Get a quote

Product parameter
Data sheet

Product parameter

Part Number	SIE830DF-T1-E3	Manufacturer	Electro-Films (EFI) / Vishay
Description	MOSFET N-CH 30V 50A 10-POLARPAK	Lead Free Status / RoHS Status	Lead free / RoHS Compliant
Quantity Available	4576 pcs	Data sheet	SIE830DF
Category	Discrete Semiconductor Products	Vgs(th) (Max) @ Id	2V @ 250µA
Vgs (Max)	±12V	Technology	MOSFET (Metal Oxide)
Supplier Device Package	10-PolarPAK® (S)	Series	WFET®
Rds On (Max) @ Id, Vgs	4.2 mOhm @ 16A, 10V	Power Dissipation (Max)	5.2W (Ta), 104W (Tc)
Packaging	Tape & Reel (TR)	Package / Case	10-PolarPAK® (S)
Other Names	SIE830DF-T1-E3TR	Operating Temperature	-55°C ~ 150°C (TJ)
Mounting Type	Surface Mount	Moisture Sensitivity Level (MSL)	1 (Unlimited)
Lead Free Status / RoHS Status	Lead free / RoHS Compliant	Input Capacitance (Ciss) (Max) @ Vds	5500pF @ 15V
Gate Charge (Qg) (Max) @ Vgs	115nC @ 10V	FET Type	N-Channel
FET Feature	-	Drive Voltage (Max Rds On, Min Rds On)	4.5V, 10V
Drain to Source Voltage (Vdss)	30V	Detailed Description	N-Channel 30V 50A (Tc) 5.2W (Ta), 104W (Tc) Surface Mount 10-PolarPAK® (S)
Current - Continuous Drain (Id) @ 25°C	50A (Tc)

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