SIE836DF-T1-GE3
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See Product Specifications for product details.
Buy SIE836DF-T1-GE3 with confidence from Components-World.HK, 1 Year Warranty
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| Part Number | SIE836DF-T1-GE3 |
|---|---|
| Manufacturer | Electro-Films (EFI) / Vishay |
| Description | MOSFET N-CH 200V 18.3A POLARPAK |
| Lead Free Status / RoHS Status | Lead free / RoHS Compliant |
| Reference Price (In US Dollars) | Get a quote | ||||
- Product parameter
- Data sheet
Product parameter
| Part Number | SIE836DF-T1-GE3 | Manufacturer | Electro-Films (EFI) / Vishay |
|---|---|---|---|
| Description | MOSFET N-CH 200V 18.3A POLARPAK | Lead Free Status / RoHS Status | Lead free / RoHS Compliant |
| Quantity Available | 4318 pcs | Data sheet | SIE836DF |
| Category | Discrete Semiconductor Products | Vgs(th) (Max) @ Id | 4.5V @ 250µA |
| Vgs (Max) | ±30V | Technology | MOSFET (Metal Oxide) |
| Supplier Device Package | 10-PolarPAK® (SH) | Series | TrenchFET® |
| Rds On (Max) @ Id, Vgs | 130 mOhm @ 4.1A, 10V | Power Dissipation (Max) | 5.2W (Ta), 104W (Tc) |
| Packaging | Tape & Reel (TR) | Package / Case | 10-PolarPAK® (SH) |
| Other Names | SIE836DF-T1-GE3TR SIE836DFT1GE3 |
Operating Temperature | -55°C ~ 150°C (TJ) |
| Mounting Type | Surface Mount | Moisture Sensitivity Level (MSL) | 1 (Unlimited) |
| Lead Free Status / RoHS Status | Lead free / RoHS Compliant | Input Capacitance (Ciss) (Max) @ Vds | 1200pF @ 100V |
| Gate Charge (Qg) (Max) @ Vgs | 41nC @ 10V | FET Type | N-Channel |
| FET Feature | - | Drive Voltage (Max Rds On, Min Rds On) | 10V |
| Drain to Source Voltage (Vdss) | 200V | Detailed Description | N-Channel 200V 18.3A (Tc) 5.2W (Ta), 104W (Tc) Surface Mount 10-PolarPAK® (SH) |
| Current - Continuous Drain (Id) @ 25°C | 18.3A (Tc) |
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