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Home > Products > Discrete Semiconductor Products > Transistors - FETs, MOSFETs - Single > SI5475DDC-T1-GE3

SI5475DDC-T1-GE3

SI5475DDC-T1-GE3
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Part Number SI5475DDC-T1-GE3
Manufacturer Electro-Films (EFI) / Vishay
Description MOSFET P-CH 12V 6A 1206-8
Lead Free Status / RoHS Status Lead free / RoHS Compliant
In Stock 3968 pcs
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Part Number SI5475DDC-T1-GE3 Manufacturer Electro-Films (EFI) / Vishay
Description MOSFET P-CH 12V 6A 1206-8 Lead Free Status / RoHS Status Lead free / RoHS Compliant
Quantity Available 3968 pcs Data sheet SI5475DDC
Category Discrete Semiconductor Products Vgs(th) (Max) @ Id 1V @ 250µA
Vgs (Max) ±8V Technology MOSFET (Metal Oxide)
Supplier Device Package 1206-8 ChipFET™ Series TrenchFET®
Rds On (Max) @ Id, Vgs 32 mOhm @ 5.4A, 4.5V Power Dissipation (Max) 2.3W (Ta), 5.7W (Tc)
Packaging Cut Tape (CT) Package / Case 8-SMD, Flat Lead
Other Names SI5475DDC-T1-GE3CT Operating Temperature -55°C ~ 150°C (TJ)
Mounting Type Surface Mount Moisture Sensitivity Level (MSL) 1 (Unlimited)
Lead Free Status / RoHS Status Lead free / RoHS Compliant Input Capacitance (Ciss) (Max) @ Vds 1600pF @ 6V
Gate Charge (Qg) (Max) @ Vgs 50nC @ 8V FET Type P-Channel
FET Feature - Drive Voltage (Max Rds On, Min Rds On) 1.8V, 4.5V
Drain to Source Voltage (Vdss) 12V Detailed Description P-Channel 12V 6A (Tc) 2.3W (Ta), 5.7W (Tc) Surface Mount 1206-8 ChipFET™
Current - Continuous Drain (Id) @ 25°C 6A (Tc)

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