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Home > Products > Discrete Semiconductor Products > Transistors - FETs, MOSFETs - Single > SI5475BDC-T1-GE3

SI5475BDC-T1-GE3

SI5475BDC-T1-GE3

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Part Number	SI5475BDC-T1-GE3
Manufacturer	Electro-Films (EFI) / Vishay
Description	MOSFET P-CH 12V 6A 1206-8
Lead Free Status / RoHS Status	Lead free / RoHS Compliant

~~In Stock~~ 5644 pcs
Reference Price (In US Dollars)	Get a quote

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Data sheet

Product parameter

Part Number	SI5475BDC-T1-GE3	Manufacturer	Electro-Films (EFI) / Vishay
Description	MOSFET P-CH 12V 6A 1206-8	Lead Free Status / RoHS Status	Lead free / RoHS Compliant
Quantity Available	5644 pcs	Data sheet	SI5475BDC
Category	Discrete Semiconductor Products	Vgs(th) (Max) @ Id	1V @ 250µA
Vgs (Max)	±8V	Technology	MOSFET (Metal Oxide)
Supplier Device Package	1206-8 ChipFET™	Series	TrenchFET®
Rds On (Max) @ Id, Vgs	28 mOhm @ 5.6A, 4.5V	Power Dissipation (Max)	2.5W (Ta), 6.3W (Tc)
Packaging	Tape & Reel (TR)	Package / Case	8-SMD, Flat Lead
Operating Temperature	-55°C ~ 150°C (TJ)	Mounting Type	Surface Mount
Moisture Sensitivity Level (MSL)	1 (Unlimited)	Lead Free Status / RoHS Status	Lead free / RoHS Compliant
Input Capacitance (Ciss) (Max) @ Vds	1400pF @ 6V	Gate Charge (Qg) (Max) @ Vgs	40nC @ 8V
FET Type	P-Channel	FET Feature	-
Drive Voltage (Max Rds On, Min Rds On)	1.8V, 4.5V	Drain to Source Voltage (Vdss)	12V
Detailed Description	P-Channel 12V 6A (Ta) 2.5W (Ta), 6.3W (Tc) Surface Mount 1206-8 ChipFET™	Current - Continuous Drain (Id) @ 25°C	6A (Ta)

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