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Home > Products > Discrete Semiconductor Products > Transistors - FETs, MOSFETs - Single > SI5475DC-T1-GE3

SI5475DC-T1-GE3

SI5475DC-T1-GE3

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Part Number	SI5475DC-T1-GE3
Manufacturer	Electro-Films (EFI) / Vishay
Description	MOSFET P-CH 12V 5.5A 1206-8
Lead Free Status / RoHS Status	Lead free / RoHS Compliant

~~In Stock~~ 5141 pcs
Reference Price (In US Dollars)	Get a quote

Product parameter
Data sheet

Product parameter

Part Number	SI5475DC-T1-GE3	Manufacturer	Electro-Films (EFI) / Vishay
Description	MOSFET P-CH 12V 5.5A 1206-8	Lead Free Status / RoHS Status	Lead free / RoHS Compliant
Quantity Available	5141 pcs	Data sheet	SI5475DC
Category	Discrete Semiconductor Products	Vgs(th) (Max) @ Id	450mV @ 1mA (Min)
Vgs (Max)	±8V	Technology	MOSFET (Metal Oxide)
Supplier Device Package	1206-8 ChipFET™	Series	TrenchFET®
Rds On (Max) @ Id, Vgs	31 mOhm @ 5.5A, 4.5V	Power Dissipation (Max)	1.3W (Ta)
Packaging	Tape & Reel (TR)	Package / Case	8-SMD, Flat Lead
Operating Temperature	-55°C ~ 150°C (TJ)	Mounting Type	Surface Mount
Moisture Sensitivity Level (MSL)	1 (Unlimited)	Lead Free Status / RoHS Status	Lead free / RoHS Compliant
Gate Charge (Qg) (Max) @ Vgs	29nC @ 4.5V	FET Type	P-Channel
FET Feature	-	Drive Voltage (Max Rds On, Min Rds On)	1.8V, 4.5V
Drain to Source Voltage (Vdss)	12V	Detailed Description	P-Channel 12V 5.5A (Ta) 1.3W (Ta) Surface Mount 1206-8 ChipFET™
Current - Continuous Drain (Id) @ 25°C	5.5A (Ta)

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