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Home > Products > Discrete Semiconductor Products > Transistors - IGBTs - Single > HGTP5N120BND

HGTP5N120BND

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Part Number HGTP5N120BND
Manufacturer AMI Semiconductor / ON Semiconductor
Description IGBT 1200V 21A 167W TO220AB
Lead Free Status / RoHS Status Lead free / RoHS Compliant
In Stock 59898 pcs
Reference Price
(In US Dollars)		800 pcs
$0.648

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$0.648

Product parameter

Part Number HGTP5N120BND Manufacturer AMI Semiconductor / ON Semiconductor
Description IGBT 1200V 21A 167W TO220AB Lead Free Status / RoHS Status Lead free / RoHS Compliant
Quantity Available 59898 pcs Data sheet TO220B03 Pkg DrawingHGTG5N120BND, HGTP5N120BND
Category Discrete Semiconductor Products Voltage - Collector Emitter Breakdown (Max) 1200V
Vce(on) (Max) @ Vge, Ic 2.7V @ 15V, 5A Test Condition 960V, 5A, 25 Ohm, 15V
Td (on/off) @ 25°C 22ns/160ns Switching Energy 450µJ (on), 390µJ (off)
Supplier Device Package TO-220AB Series -
Reverse Recovery Time (trr) 65ns Power - Max 167W
Packaging Tube Package / Case TO-220-3
Operating Temperature -55°C ~ 150°C (TJ) Mounting Type Through Hole
Moisture Sensitivity Level (MSL) 1 (Unlimited) Lead Free Status / RoHS Status Lead free / RoHS Compliant
Input Type Standard IGBT Type NPT
Gate Charge 53nC Detailed Description IGBT NPT 1200V 21A 167W Through Hole TO-220AB
Current - Collector Pulsed (Icm) 40A Current - Collector (Ic) (Max) 21A

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