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Home > Products > Discrete Semiconductor Products > Transistors - IGBTs - Single > HGTP3N60A4D

HGTP3N60A4D

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Part Number HGTP3N60A4D
Manufacturer AMI Semiconductor / ON Semiconductor
Description IGBT 600V 17A 70W TO220AB
Lead Free Status / RoHS Status Lead free / RoHS Compliant
In Stock 70588 pcs
Reference Price
(In US Dollars)		800 pcs
$0.497

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$0.497

Product parameter

Part Number HGTP3N60A4D Manufacturer AMI Semiconductor / ON Semiconductor
Description IGBT 600V 17A 70W TO220AB Lead Free Status / RoHS Status Lead free / RoHS Compliant
Quantity Available 70588 pcs Data sheet TO220B03 Pkg DrawingHGT1S3N60A4DS,HGTP3N60A4D
Category Discrete Semiconductor Products Voltage - Collector Emitter Breakdown (Max) 600V
Vce(on) (Max) @ Vge, Ic 2.7V @ 15V, 3A Test Condition 390V, 3A, 50 Ohm, 15V
Td (on/off) @ 25°C 6ns/73ns Switching Energy 37µJ (on), 25µJ (off)
Supplier Device Package TO-220AB Series -
Reverse Recovery Time (trr) 29ns Power - Max 70W
Packaging Tube Package / Case TO-220-3
Other Names HGTP3N60A4D_NL
HGTP3N60A4D_NL-ND		 Operating Temperature -55°C ~ 150°C (TJ)
Mounting Type Through Hole Moisture Sensitivity Level (MSL) 1 (Unlimited)
Lead Free Status / RoHS Status Lead free / RoHS Compliant Input Type Standard
IGBT Type - Gate Charge 21nC
Detailed Description IGBT 600V 17A 70W Through Hole TO-220AB Current - Collector Pulsed (Icm) 40A
Current - Collector (Ic) (Max) 17A

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