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Home > Products > Discrete Semiconductor Products > Transistors - IGBTs - Single > HGTG5N120BND

HGTG5N120BND

HGTG5N120BND
OMRON AUTOMATION & SAFETYImages are for reference only.
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Part Number HGTG5N120BND
Manufacturer AMI Semiconductor / ON Semiconductor
Description IGBT 1200V 21A 167W TO247
Lead Free Status / RoHS Status Lead free / RoHS Compliant
In Stock 72989 pcs
Reference Price
(In US Dollars)		1 pcs10 pcs450 pcs900 pcs1350 pcs
$1.004$0.90$0.70$0.628$0.53

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Part Number HGTG5N120BND Manufacturer AMI Semiconductor / ON Semiconductor
Description IGBT 1200V 21A 167W TO247 Lead Free Status / RoHS Status Lead free / RoHS Compliant
Quantity Available 72989 pcs Data sheet HGTG5N120BND, HGTP5N120BND
Category Discrete Semiconductor Products Voltage - Collector Emitter Breakdown (Max) 1200V
Vce(on) (Max) @ Vge, Ic 2.7V @ 15V, 5A Test Condition 960V, 5A, 25 Ohm, 15V
Td (on/off) @ 25°C 22ns/160ns Switching Energy 450µJ (on), 390µJ (off)
Supplier Device Package TO-247 Series -
Reverse Recovery Time (trr) 65ns Power - Max 167W
Packaging Tube Package / Case TO-247-3
Other Names HGTG5N120BND-ND
HGTG5N120BNDFS		 Operating Temperature -55°C ~ 150°C (TJ)
Mounting Type Through Hole Moisture Sensitivity Level (MSL) 1 (Unlimited)
Lead Free Status / RoHS Status Lead free / RoHS Compliant Input Type Standard
IGBT Type NPT Gate Charge 53nC
Detailed Description IGBT NPT 1200V 21A 167W Through Hole TO-247 Current - Collector Pulsed (Icm) 40A
Current - Collector (Ic) (Max) 21A

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