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Home > Products > Discrete Semiconductor Products > Transistors - IGBTs - Single > HGTP10N120BN

HGTP10N120BN

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Part Number HGTP10N120BN
Manufacturer AMI Semiconductor / ON Semiconductor
Description IGBT 1200V 35A 298W TO220AB
Lead Free Status / RoHS Status Lead free / RoHS Compliant
In Stock 54685 pcs
Reference Price
(In US Dollars)		800 pcs
$0.721

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$0.721

Product parameter

Part Number HGTP10N120BN Manufacturer AMI Semiconductor / ON Semiconductor
Description IGBT 1200V 35A 298W TO220AB Lead Free Status / RoHS Status Lead free / RoHS Compliant
Quantity Available 54685 pcs Data sheet TO220B03 Pkg DrawingHGT(G,P)10N120BN, HGT1S10N120BNS
Category Discrete Semiconductor Products Voltage - Collector Emitter Breakdown (Max) 1200V
Vce(on) (Max) @ Vge, Ic 2.7V @ 15V, 10A Test Condition 960V, 10A, 10 Ohm, 15V
Td (on/off) @ 25°C 23ns/165ns Switching Energy 320µJ (on), 800µJ (off)
Supplier Device Package TO-220AB Series -
Power - Max 298W Packaging Tube
Package / Case TO-220-3 Other Names HGTP10N120BN-ND
HGTP10N120BNFS
Operating Temperature -55°C ~ 150°C (TJ) Mounting Type Through Hole
Moisture Sensitivity Level (MSL) 1 (Unlimited) Lead Free Status / RoHS Status Lead free / RoHS Compliant
Input Type Standard IGBT Type NPT
Gate Charge 100nC Detailed Description IGBT NPT 1200V 35A 298W Through Hole TO-220AB
Current - Collector Pulsed (Icm) 80A Current - Collector (Ic) (Max) 35A

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