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Home > Products > Discrete Semiconductor Products > Transistors - Bipolar (BJT) - Single, Pre-Biased > FJV3113RMTF

FJV3113RMTF

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Part Number FJV3113RMTF
Manufacturer AMI Semiconductor / ON Semiconductor
Description TRANS PREBIAS NPN 200MW SOT23-3
Lead Free Status / RoHS Status Lead free / RoHS Compliant
In Stock 1457006 pcs
Reference Price
(In US Dollars)		1 pcs10 pcs100 pcs500 pcs1000 pcs
$0.078$0.07$0.038$0.024$0.016

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$0.078

Product parameter

Part Number FJV3113RMTF Manufacturer AMI Semiconductor / ON Semiconductor
Description TRANS PREBIAS NPN 200MW SOT23-3 Lead Free Status / RoHS Status Lead free / RoHS Compliant
Quantity Available 1457006 pcs Data sheet FJV3113RMolded Pkg, SUPERSOT, 3 Lead Drawing
Category Discrete Semiconductor Products Voltage - Collector Emitter Breakdown (Max) 50V
Vce Saturation (Max) @ Ib, Ic 300mV @ 500µA, 10mA Transistor Type NPN - Pre-Biased
Supplier Device Package SOT-23-3 (TO-236) Series -
Resistor - Emitter Base (R2) 47 kOhms Resistor - Base (R1) 2.2 kOhms
Power - Max 200mW Packaging Original-Reel®
Package / Case TO-236-3, SC-59, SOT-23-3 Other Names FJV3113RMTFDKR
Mounting Type Surface Mount Moisture Sensitivity Level (MSL) 1 (Unlimited)
Manufacturer Standard Lead Time 2 Weeks Lead Free Status / RoHS Status Lead free / RoHS Compliant
Frequency - Transition 250MHz Detailed Description Pre-Biased Bipolar Transistor (BJT) NPN - Pre-Biased 50V 100mA 250MHz 200mW Surface Mount SOT-23-3 (TO-236)
DC Current Gain (hFE) (Min) @ Ic, Vce 68 @ 5mA, 5V Current - Collector Cutoff (Max) 100nA (ICBO)
Current - Collector (Ic) (Max) 100mA Base Part Number FJV3113

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