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Home > Products > Discrete Semiconductor Products > Transistors - Bipolar (BJT) - Single, Pre-Biased > FJV4102RMTF

FJV4102RMTF

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Part Number FJV4102RMTF
Manufacturer AMI Semiconductor / ON Semiconductor
Description TRANS PREBIAS PNP 200MW SOT23-3
Lead Free Status / RoHS Status Lead free / RoHS Compliant
In Stock 5976 pcs
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Part Number FJV4102RMTF Manufacturer AMI Semiconductor / ON Semiconductor
Description TRANS PREBIAS PNP 200MW SOT23-3 Lead Free Status / RoHS Status Lead free / RoHS Compliant
Quantity Available 5976 pcs Data sheet FJV4102R
Category Discrete Semiconductor Products Voltage - Collector Emitter Breakdown (Max) 50V
Vce Saturation (Max) @ Ib, Ic 300mV @ 500µA, 10mA Transistor Type PNP - Pre-Biased
Supplier Device Package SOT-23-3 (TO-236) Series -
Resistor - Emitter Base (R2) 10 kOhms Resistor - Base (R1) 10 kOhms
Power - Max 200mW Packaging Cut Tape (CT)
Package / Case TO-236-3, SC-59, SOT-23-3 Other Names FJV4102RMTFCT
Mounting Type Surface Mount Moisture Sensitivity Level (MSL) 1 (Unlimited)
Lead Free Status / RoHS Status Lead free / RoHS Compliant Frequency - Transition 200MHz
Detailed Description Pre-Biased Bipolar Transistor (BJT) PNP - Pre-Biased 50V 100mA 200MHz 200mW Surface Mount SOT-23-3 (TO-236) DC Current Gain (hFE) (Min) @ Ic, Vce 30 @ 5mA, 5V
Current - Collector Cutoff (Max) 100nA (ICBO) Current - Collector (Ic) (Max) 100mA
Base Part Number FJV4102

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