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Home > Products > Discrete Semiconductor Products > Transistors - Bipolar (BJT) - Single, Pre-Biased > FJV3106RMTF

FJV3106RMTF

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Part Number FJV3106RMTF
Manufacturer AMI Semiconductor / ON Semiconductor
Description TRANS PREBIAS NPN 200MW SOT23-3
Lead Free Status / RoHS Status Lead free / RoHS Compliant
In Stock 5933 pcs
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Part Number FJV3106RMTF Manufacturer AMI Semiconductor / ON Semiconductor
Description TRANS PREBIAS NPN 200MW SOT23-3 Lead Free Status / RoHS Status Lead free / RoHS Compliant
Quantity Available 5933 pcs Data sheet FJV3106RMolded Pkg, SUPERSOT, 3 Lead Drawing
Category Discrete Semiconductor Products Voltage - Collector Emitter Breakdown (Max) 50V
Vce Saturation (Max) @ Ib, Ic 300mV @ 500µA, 10mA Transistor Type NPN - Pre-Biased
Supplier Device Package SOT-23-3 (TO-236) Series -
Resistor - Emitter Base (R2) 47 kOhms Resistor - Base (R1) 10 kOhms
Power - Max 200mW Packaging Tape & Reel (TR)
Package / Case TO-236-3, SC-59, SOT-23-3 Mounting Type Surface Mount
Moisture Sensitivity Level (MSL) 1 (Unlimited) Lead Free Status / RoHS Status Lead free / RoHS Compliant
Frequency - Transition 250MHz Detailed Description Pre-Biased Bipolar Transistor (BJT) NPN - Pre-Biased 50V 100mA 250MHz 200mW Surface Mount SOT-23-3 (TO-236)
DC Current Gain (hFE) (Min) @ Ic, Vce 68 @ 5mA, 5V Current - Collector Cutoff (Max) 100nA (ICBO)
Current - Collector (Ic) (Max) 100mA

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