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Home > Products > Discrete Semiconductor Products > Transistors - Bipolar (BJT) - Single, Pre-Biased > FJV3111RMTF

FJV3111RMTF

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Part Number FJV3111RMTF
Manufacturer AMI Semiconductor / ON Semiconductor
Description TRANS PREBIAS NPN 200MW SOT23-3
Lead Free Status / RoHS Status Lead free / RoHS Compliant
In Stock 4766 pcs
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Part Number FJV3111RMTF Manufacturer AMI Semiconductor / ON Semiconductor
Description TRANS PREBIAS NPN 200MW SOT23-3 Lead Free Status / RoHS Status Lead free / RoHS Compliant
Quantity Available 4766 pcs Data sheet FJV3111RMolded Pkg, SUPERSOT, 3 Lead Drawing
Category Discrete Semiconductor Products Voltage - Collector Emitter Breakdown (Max) 40V
Vce Saturation (Max) @ Ib, Ic 300mV @ 1mA, 10mA Transistor Type NPN - Pre-Biased
Supplier Device Package SOT-23-3 (TO-236) Series -
Resistor - Base (R1) 22 kOhms Power - Max 200mW
Packaging Tape & Reel (TR) Package / Case TO-236-3, SC-59, SOT-23-3
Mounting Type Surface Mount Moisture Sensitivity Level (MSL) 1 (Unlimited)
Lead Free Status / RoHS Status Lead free / RoHS Compliant Frequency - Transition 250MHz
Detailed Description Pre-Biased Bipolar Transistor (BJT) NPN - Pre-Biased 40V 100mA 250MHz 200mW Surface Mount SOT-23-3 (TO-236) DC Current Gain (hFE) (Min) @ Ic, Vce 100 @ 1mA, 5V
Current - Collector Cutoff (Max) 100nA (ICBO) Current - Collector (Ic) (Max) 100mA

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