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Home > Products > Discrete Semiconductor Products > Transistors - FETs, MOSFETs - Arrays > SI3900DV-T1-E3

SI3900DV-T1-E3

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Part Number	SI3900DV-T1-E3
Manufacturer	Vishay Siliconix
Description	MOSFET 2N-CH 20V 2A 6-TSOP
Lead Free Status / RoHS Status	Lead free / RoHS Compliant

~~In Stock~~ 326816 pcs
Reference Price (In US Dollars)	3000 pcs	6000 pcs	15000 pcs
Reference Price (In US Dollars)	$0.085	$0.079	$0.074

Product parameter
Data sheet

Product parameter

Part Number	SI3900DV-T1-E3	Manufacturer	Vishay Siliconix
Description	MOSFET 2N-CH 20V 2A 6-TSOP	Lead Free Status / RoHS Status	Lead free / RoHS Compliant
Quantity Available	326816 pcs	Data sheet	SI3900DV
Category	Discrete Semiconductor Products	Voltage - Test	-
Voltage - Breakdown	6-TSOP	Vgs(th) (Max) @ Id	125 mOhm @ 2.4A, 4.5V
Series	TrenchFET®	RoHS Status	Tape & Reel (TR)
Rds On (Max) @ Id, Vgs	2A	Power - Max	830mW
Polarization	SOT-23-6 Thin, TSOT-23-6	Other Names	SI3900DV-T1-E3TR SI3900DVT1E3
Operating Temperature	-55°C ~ 150°C (TJ)	Mounting Type	Surface Mount
Moisture Sensitivity Level (MSL)	1 (Unlimited)	Manufacturer Standard Lead Time	15 Weeks
Manufacturer Part Number	SI3900DV-T1-E3	Input Capacitance (Ciss) (Max) @ Vds	4nC @ 4.5V
Gate Charge (Qg) (Max) @ Vgs	1.5V @ 250µA	FET Feature	2 N-Channel (Dual)
Expanded Description	Mosfet Array 2 N-Channel (Dual) 20V 2A 830mW Surface Mount 6-TSOP	Drain to Source Voltage (Vdss)	Logic Level Gate
Description	MOSFET 2N-CH 20V 2A 6-TSOP	Current - Continuous Drain (Id) @ 25°C	20V

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