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Home > Products > Discrete Semiconductor Products > Transistors - FETs, MOSFETs - Arrays > SI3900DV-T1-GE3

SI3900DV-T1-GE3

SI3900DV-T1-GE3

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Part Number	SI3900DV-T1-GE3
Manufacturer	Electro-Films (EFI) / Vishay
Description	MOSFET 2N-CH 20V 2A 6-TSOP
Lead Free Status / RoHS Status	Lead free / RoHS Compliant

~~In Stock~~ 136419 pcs
Reference Price (In US Dollars)	3000 pcs
Reference Price (In US Dollars)	$0.165

Product parameter
Data sheet

Product parameter

Part Number	SI3900DV-T1-GE3	Manufacturer	Electro-Films (EFI) / Vishay
Description	MOSFET 2N-CH 20V 2A 6-TSOP	Lead Free Status / RoHS Status	Lead free / RoHS Compliant
Quantity Available	136419 pcs	Data sheet	SI3900DV
Category	Discrete Semiconductor Products	Vgs(th) (Max) @ Id	1.5V @ 250µA
Supplier Device Package	6-TSOP	Series	TrenchFET®
Rds On (Max) @ Id, Vgs	125 mOhm @ 2.4A, 4.5V	Power - Max	830mW
Packaging	Tape & Reel (TR)	Package / Case	SOT-23-6 Thin, TSOT-23-6
Other Names	SI3900DV-T1-GE3TR SI3900DVT1GE3	Operating Temperature	-55°C ~ 150°C (TJ)
Mounting Type	Surface Mount	Moisture Sensitivity Level (MSL)	1 (Unlimited)
Manufacturer Standard Lead Time	33 Weeks	Lead Free Status / RoHS Status	Lead free / RoHS Compliant
Input Capacitance (Ciss) (Max) @ Vds	-	Gate Charge (Qg) (Max) @ Vgs	4nC @ 4.5V
FET Type	2 N-Channel (Dual)	FET Feature	Logic Level Gate
Drain to Source Voltage (Vdss)	20V	Detailed Description	Mosfet Array 2 N-Channel (Dual) 20V 2A 830mW Surface Mount 6-TSOP
Current - Continuous Drain (Id) @ 25°C	2A	Base Part Number	SI3900

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