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Home > Products > Discrete Semiconductor Products > Transistors - FETs, MOSFETs - Arrays > SI3911DV-T1-E3

SI3911DV-T1-E3

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Part Number	SI3911DV-T1-E3
Manufacturer	Electro-Films (EFI) / Vishay
Description	MOSFET 2P-CH 20V 1.8A 6TSOP
Lead Free Status / RoHS Status	Lead free / RoHS Compliant

~~In Stock~~ 5935 pcs
Reference Price (In US Dollars)	Get a quote

Product parameter
Data sheet

Product parameter

Part Number	SI3911DV-T1-E3	Manufacturer	Electro-Films (EFI) / Vishay
Description	MOSFET 2P-CH 20V 1.8A 6TSOP	Lead Free Status / RoHS Status	Lead free / RoHS Compliant
Quantity Available	5935 pcs	Data sheet	SI3911DV
Category	Discrete Semiconductor Products	Vgs(th) (Max) @ Id	450mV @ 250µA (Min)
Supplier Device Package	6-TSOP	Series	TrenchFET®
Rds On (Max) @ Id, Vgs	145 mOhm @ 2.2A, 4.5V	Power - Max	830mW
Packaging	Cut Tape (CT)	Package / Case	SOT-23-6 Thin, TSOT-23-6
Other Names	SI3911DV-T1-E3CT	Operating Temperature	-55°C ~ 150°C (TJ)
Mounting Type	Surface Mount	Moisture Sensitivity Level (MSL)	1 (Unlimited)
Lead Free Status / RoHS Status	Lead free / RoHS Compliant	Input Capacitance (Ciss) (Max) @ Vds	-
Gate Charge (Qg) (Max) @ Vgs	7.5nC @ 4.5V	FET Type	2 P-Channel (Dual)
FET Feature	Logic Level Gate	Drain to Source Voltage (Vdss)	20V
Detailed Description	Mosfet Array 2 P-Channel (Dual) 20V 1.8A 830mW Surface Mount 6-TSOP	Current - Continuous Drain (Id) @ 25°C	1.8A
Base Part Number	SI3911

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