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Home > Products > Discrete Semiconductor Products > Transistors - Bipolar (BJT) - Single, Pre-Biased > RN2301,LF

RN2301,LF

RN2301,LF
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Part Number RN2301,LF
Manufacturer Toshiba Semiconductor and Storage
Description TRANS PREBIAS PNP 0.1W USM
Lead Free Status / RoHS Status Lead free / RoHS Compliant
In Stock 3708171 pcs
Reference Price
(In US Dollars)
3000 pcs6000 pcs15000 pcs
$0.012$0.011$0.009
30000 pcs75000 pcs150000 pcs
$0.008$0.007$0.006

Submit a Request For Quotation on quantities greater than those displayed.

Target Price:(USD)
Quantity:
Total:
$0.012

Product parameter

Part Number RN2301,LF Manufacturer Toshiba Semiconductor and Storage
Description TRANS PREBIAS PNP 0.1W USM Lead Free Status / RoHS Status Lead free / RoHS Compliant
Quantity Available 3708171 pcs Data sheet RN2301-06
Category Discrete Semiconductor Products Voltage - Collector Emitter Breakdown (Max) 50V
Vce Saturation (Max) @ Ib, Ic 300mV @ 250µA, 5mA Transistor Type PNP - Pre-Biased
Supplier Device Package USM Series -
Resistor - Emitter Base (R2) 4.7 kOhms Resistor - Base (R1) 4.7 kOhms
Power - Max 100mW Packaging Tape & Reel (TR)
Package / Case SC-70, SOT-323 Other Names RN2301(TE85L,F)
RN2301(TE85LF)
RN2301(TE85LF)-ND
RN2301(TE85LF)TR
RN2301(TE85LF)TR-ND
RN2301,LF(B
RN2301,LF(T
RN2301LFTR
RN2301TE85LF
Mounting Type Surface Mount Moisture Sensitivity Level (MSL) 1 (Unlimited)
Manufacturer Standard Lead Time 16 Weeks Lead Free Status / RoHS Status Lead free / RoHS Compliant
Frequency - Transition 200MHz Detailed Description Pre-Biased Bipolar Transistor (BJT) PNP - Pre-Biased 50V 100mA 200MHz 100mW Surface Mount USM
DC Current Gain (hFE) (Min) @ Ic, Vce 30 @ 10mA, 5V Current - Collector Cutoff (Max) 500nA
Current - Collector (Ic) (Max) 100mA Base Part Number RN230*

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