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Home > Products > Discrete Semiconductor Products > Transistors - Bipolar (BJT) - Single, Pre-Biased > RN2310(TE85L,F)

RN2310(TE85L,F)

RN2310(TE85L,F)
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Part Number RN2310(TE85L,F)
Manufacturer Toshiba Semiconductor and Storage
Description TRANS PREBIAS PNP 0.1W USM
Lead Free Status / RoHS Status Lead free / RoHS Compliant
In Stock 1420703 pcs
Reference Price
(In US Dollars)		3000 pcs
$0.017

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$0.017

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Part Number RN2310(TE85L,F) Manufacturer Toshiba Semiconductor and Storage
Description TRANS PREBIAS PNP 0.1W USM Lead Free Status / RoHS Status Lead free / RoHS Compliant
Quantity Available 1420703 pcs Data sheet RN2310,11
Category Discrete Semiconductor Products Voltage - Collector Emitter Breakdown (Max) 50V
Vce Saturation (Max) @ Ib, Ic 300mV @ 250µA, 5mA Transistor Type PNP - Pre-Biased
Supplier Device Package USM Series -
Resistor - Base (R1) 4.7 kOhms Power - Max 100mW
Packaging Tape & Reel (TR) Package / Case SC-70, SOT-323
Other Names RN2310(TE85LF)
RN2310(TE85LF)-ND
RN2310(TE85LF)TR
RN2310TE85LF		 Mounting Type Surface Mount
Moisture Sensitivity Level (MSL) 1 (Unlimited) Manufacturer Standard Lead Time 16 Weeks
Lead Free Status / RoHS Status Lead free / RoHS Compliant Frequency - Transition 200MHz
Detailed Description Pre-Biased Bipolar Transistor (BJT) PNP - Pre-Biased 50V 100mA 200MHz 100mW Surface Mount USM DC Current Gain (hFE) (Min) @ Ic, Vce 120 @ 1mA, 5V
Current - Collector Cutoff (Max) 100nA (ICBO) Current - Collector (Ic) (Max) 100mA
Base Part Number RN231*

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