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Home > Products > Discrete Semiconductor Products > Transistors - Bipolar (BJT) - Single, Pre-Biased > RN2112ACT(TPL3)

RN2112ACT(TPL3)

RN2112ACT(TPL3)
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Part Number RN2112ACT(TPL3)
Manufacturer Toshiba Semiconductor and Storage
Description TRANS PREBIAS PNP 0.1W CST3
Lead Free Status / RoHS Status Lead free / RoHS Compliant
In Stock 1303602 pcs
Reference Price
(In US Dollars)
10000 pcs
$0.019

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$0.019

Product parameter

Part Number RN2112ACT(TPL3) Manufacturer Toshiba Semiconductor and Storage
Description TRANS PREBIAS PNP 0.1W CST3 Lead Free Status / RoHS Status Lead free / RoHS Compliant
Quantity Available 1303602 pcs Data sheet RN2112ACT-13ACT
Category Discrete Semiconductor Products Voltage - Collector Emitter Breakdown (Max) 80mA
Voltage - Breakdown CST3 Vce Saturation (Max) @ Ib, Ic 50V
Series - RoHS Status Tape & Reel (TR)
Resistor - Emitter Base (R2) (Ohms) 22k Resistor - Base (R1) (Ohms) -
Power - Max 100mW Polarization SC-101, SOT-883
Other Names RN2112ACT(TPL3)TR Noise Figure (dB Typ @ f) -
Mounting Type Surface Mount Moisture Sensitivity Level (MSL) 1 (Unlimited)
Manufacturer Part Number RN2112ACT(TPL3) Frequency - Transition 120 @ 1mA, 5V
Expanded Description Pre-Biased Bipolar Transistor (BJT) PNP - Pre-Biased 50V 80mA 100mW Surface Mount CST3 Description TRANS PREBIAS PNP 0.1W CST3
DC Current Gain (hFE) (Min) @ Ic, Vce 100nA (ICBO) Current - Collector Cutoff (Max) 150mV @ 250µA, 5mA
Current - Collector (Ic) (Max) PNP - Pre-Biased

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