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Home > Products > Discrete Semiconductor Products > Transistors - Bipolar (BJT) - Single, Pre-Biased > RN2110ACT(TPL3)

RN2110ACT(TPL3)

RN2110ACT(TPL3)
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Part Number RN2110ACT(TPL3)
Manufacturer Toshiba Semiconductor and Storage
Description TRANS PREBIAS PNP 0.1W CST3
Lead Free Status / RoHS Status Lead free / RoHS Compliant
In Stock 1207285 pcs
Reference Price
(In US Dollars)
10000 pcs
$0.019

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Quantity:
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$0.019

Product parameter

Part Number RN2110ACT(TPL3) Manufacturer Toshiba Semiconductor and Storage
Description TRANS PREBIAS PNP 0.1W CST3 Lead Free Status / RoHS Status Lead free / RoHS Compliant
Quantity Available 1207285 pcs Data sheet RN2110ACT-11ACT
Category Discrete Semiconductor Products Voltage - Collector Emitter Breakdown (Max) 50V
Vce Saturation (Max) @ Ib, Ic 150mV @ 250µA, 5mA Transistor Type PNP - Pre-Biased
Supplier Device Package CST3 Series -
Resistor - Base (R1) 4.7 kOhms Power - Max 100mW
Packaging Tape & Reel (TR) Package / Case SC-101, SOT-883
Other Names RN2110ACT(TPL3)TR Mounting Type Surface Mount
Moisture Sensitivity Level (MSL) 1 (Unlimited) Lead Free Status / RoHS Status Lead free / RoHS Compliant
Detailed Description Pre-Biased Bipolar Transistor (BJT) PNP - Pre-Biased 50V 80mA 100mW Surface Mount CST3 DC Current Gain (hFE) (Min) @ Ic, Vce 120 @ 1mA, 5V
Current - Collector Cutoff (Max) 100nA (ICBO) Current - Collector (Ic) (Max) 80mA

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