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Home > Products > Discrete Semiconductor Products > Transistors - Bipolar (BJT) - Single, Pre-Biased > RN2111MFV,L3F

RN2111MFV,L3F

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Part Number RN2111MFV,L3F
Manufacturer Toshiba Semiconductor and Storage
Description X34 PB-F VESM TRANSISTOR PD 150M
Lead Free Status / RoHS Status Lead free / RoHS Compliant
In Stock 2248634 pcs
Reference Price
(In US Dollars)
8000 pcs
$0.011

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$0.011

Product parameter

Part Number RN2111MFV,L3F Manufacturer Toshiba Semiconductor and Storage
Description X34 PB-F VESM TRANSISTOR PD 150M Lead Free Status / RoHS Status Lead free / RoHS Compliant
Quantity Available 2248634 pcs Data sheet RN2110-11MFV
Category Discrete Semiconductor Products Voltage - Collector Emitter Breakdown (Max) 50V
Vce Saturation (Max) @ Ib, Ic 300mV @ 250µA, 5mA Transistor Type PNP - Pre-Biased
Supplier Device Package VESM Series -
Resistor - Base (R1) 10 kOhms Power - Max 150mW
Package / Case SOT-723 Other Names RN2111MFVL3F
Mounting Type Surface Mount Manufacturer Standard Lead Time 16 Weeks
Lead Free Status / RoHS Status Lead free / RoHS Compliant Detailed Description Pre-Biased Bipolar Transistor (BJT) PNP - Pre-Biased 50V 100mA 150mW Surface Mount VESM
DC Current Gain (hFE) (Min) @ Ic, Vce 120 @ 1mA, 5V Current - Collector Cutoff (Max) 100nA (ICBO)
Current - Collector (Ic) (Max) 100mA

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