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Home > Products > Discrete Semiconductor Products > Transistors - Bipolar (BJT) - Arrays > HN1B01FU-Y(L,F,T)

HN1B01FU-Y(L,F,T)

HN1B01FU-Y(L,F,T)
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Part Number HN1B01FU-Y(L,F,T)
Manufacturer Toshiba Semiconductor and Storage
Description TRANS NPN/PNP 50V 0.15A US6
Lead Free Status / RoHS Status Lead free / RoHS Compliant
In Stock 278007 pcs
Reference Price
(In US Dollars)		1 pcs10 pcs25 pcs
$0.154$0.111$0.086

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Target Price:(USD)
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Total:
$0.154

Product parameter

Part Number HN1B01FU-Y(L,F,T) Manufacturer Toshiba Semiconductor and Storage
Description TRANS NPN/PNP 50V 0.15A US6 Lead Free Status / RoHS Status Lead free / RoHS Compliant
Quantity Available 278007 pcs Data sheet HN1B01FU
Category Discrete Semiconductor Products Voltage - Collector Emitter Breakdown (Max) 50V
Vce Saturation (Max) @ Ib, Ic 300mV @ 10mA, 100mA Transistor Type NPN, PNP
Supplier Device Package US6 Series -
Power - Max 200mW Packaging Cut Tape (CT)
Package / Case 6-TSSOP, SC-88, SOT-363 Other Names HN1B01FU-Y(LFT)CT
Operating Temperature 125°C (TJ) Mounting Type Surface Mount
Moisture Sensitivity Level (MSL) 1 (Unlimited) Lead Free Status / RoHS Status Lead free / RoHS Compliant
Frequency - Transition 120MHz Detailed Description Bipolar (BJT) Transistor Array NPN, PNP 50V 150mA 120MHz 200mW Surface Mount US6
DC Current Gain (hFE) (Min) @ Ic, Vce 120 @ 2mA, 6V Current - Collector Cutoff (Max) 100nA (ICBO)
Current - Collector (Ic) (Max) 150mA

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