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Home > Products > Discrete Semiconductor Products > Transistors - Bipolar (BJT) - Arrays > HN1B04F(TE85L,F)

HN1B04F(TE85L,F)

HN1B04F(TE85L,F)
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Part Number HN1B04F(TE85L,F)
Manufacturer Toshiba Semiconductor and Storage
Description TRANS NPN/PNP 30V 0.5A SM6
Lead Free Status / RoHS Status Lead free / RoHS Compliant
In Stock 5586 pcs
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Part Number HN1B04F(TE85L,F) Manufacturer Toshiba Semiconductor and Storage
Description TRANS NPN/PNP 30V 0.5A SM6 Lead Free Status / RoHS Status Lead free / RoHS Compliant
Quantity Available 5586 pcs Data sheet HN1B04F
Category Discrete Semiconductor Products Voltage - Collector Emitter Breakdown (Max) 30V
Vce Saturation (Max) @ Ib, Ic 250mV @ 10mA, 100mA Transistor Type NPN, PNP
Supplier Device Package SM6 Series -
Power - Max 300mW Packaging Tape & Reel (TR)
Package / Case SC-74, SOT-457 Other Names HN1B04F (TE85L,F)
HN1B04F(TE85LF)TR
Operating Temperature 150°C (TJ) Mounting Type Surface Mount
Moisture Sensitivity Level (MSL) 1 (Unlimited) Lead Free Status / RoHS Status Lead free / RoHS Compliant
Frequency - Transition 200MHz Detailed Description Bipolar (BJT) Transistor Array NPN, PNP 30V 500mA 200MHz 300mW Surface Mount SM6
DC Current Gain (hFE) (Min) @ Ic, Vce 70 @ 100mA, 1V Current - Collector Cutoff (Max) 100nA (ICBO)
Current - Collector (Ic) (Max) 500mA

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