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Home > Products > Discrete Semiconductor Products > Transistors - Bipolar (BJT) - Arrays > HN1A01F-GR(TE85L,F

HN1A01F-GR(TE85L,F

HN1A01F-GR(TE85L,F
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Part Number HN1A01F-GR(TE85L,F
Manufacturer Toshiba Semiconductor and Storage
Description TRANS 2PNP 50V 0.15A SM6
Lead Free Status / RoHS Status Lead free / RoHS Compliant
In Stock 4468 pcs
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Part Number HN1A01F-GR(TE85L,F Manufacturer Toshiba Semiconductor and Storage
Description TRANS 2PNP 50V 0.15A SM6 Lead Free Status / RoHS Status Lead free / RoHS Compliant
Quantity Available 4468 pcs Data sheet HN1A01F
Category Discrete Semiconductor Products Voltage - Collector Emitter Breakdown (Max) 50V
Vce Saturation (Max) @ Ib, Ic 300mV @ 10mA, 100mA Transistor Type 2 PNP (Dual)
Supplier Device Package SM6 Series -
Power - Max 300mW Packaging Cut Tape (CT)
Package / Case SC-74, SOT-457 Other Names HN1A01F-GR(TE85LFCT
Operating Temperature 125°C (TJ) Mounting Type Surface Mount
Moisture Sensitivity Level (MSL) 1 (Unlimited) Lead Free Status / RoHS Status Lead free / RoHS Compliant
Frequency - Transition 80MHz Detailed Description Bipolar (BJT) Transistor Array 2 PNP (Dual) 50V 150mA 80MHz 300mW Surface Mount SM6
DC Current Gain (hFE) (Min) @ Ic, Vce 200 @ 2mA, 6V Current - Collector Cutoff (Max) 100nA (ICBO)
Current - Collector (Ic) (Max) 150mA

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