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Home > Products > Discrete Semiconductor Products > Transistors - FETs, MOSFETs - Single > TSM60NB190CM2 RNG

TSM60NB190CM2 RNG

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Part Number TSM60NB190CM2 RNG
Manufacturer TSC (Taiwan Semiconductor)
Description MOSFET N-CH 600V 18A TO263
Lead Free Status / RoHS Status Lead free / RoHS Compliant
In Stock 53171 pcs
Reference Price
(In US Dollars)
800 pcs
$0.608

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Quantity:
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$0.608

Product parameter

Part Number TSM60NB190CM2 RNG Manufacturer TSC (Taiwan Semiconductor)
Description MOSFET N-CH 600V 18A TO263 Lead Free Status / RoHS Status Lead free / RoHS Compliant
Quantity Available 53171 pcs Data sheet TSM60NB190CM2
Category Discrete Semiconductor Products Vgs(th) (Max) @ Id 4V @ 250µA
Vgs (Max) ±30V Technology MOSFET (Metal Oxide)
Supplier Device Package TO-263 (D²Pak) Series -
Rds On (Max) @ Id, Vgs 190 mOhm @ 6A, 10V Power Dissipation (Max) 150.6W (Tc)
Packaging Tape & Reel (TR) Package / Case TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
Other Names TSM60NB190CM2 RNGTR
TSM60NB190CM2 RNGTR-ND
TSM60NB190CM2RNGTR
Operating Temperature -55°C ~ 150°C (TJ)
Mounting Type Surface Mount Moisture Sensitivity Level (MSL) 1 (Unlimited)
Manufacturer Standard Lead Time 14 Weeks Lead Free Status / RoHS Status Lead free / RoHS Compliant
Input Capacitance (Ciss) (Max) @ Vds 1273pF @ 100V Gate Charge (Qg) (Max) @ Vgs 31nC @ 10V
FET Type N-Channel FET Feature -
Drive Voltage (Max Rds On, Min Rds On) 10V Drain to Source Voltage (Vdss) 600V
Detailed Description N-Channel 600V 18A (Tc) 150.6W (Tc) Surface Mount TO-263 (D²Pak) Current - Continuous Drain (Id) @ 25°C 18A (Tc)

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