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Home > Products > Discrete Semiconductor Products > Transistors - FETs, MOSFETs - Single > TSM60NB099PW C1G

TSM60NB099PW C1G

TSM60NB099PW C1G
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Part Number TSM60NB099PW C1G
Manufacturer TSC (Taiwan Semiconductor)
Description MOSFET N-CHANNEL 600V 38A TO247
Lead Free Status / RoHS Status Lead free / RoHS Compliant
In Stock 22957 pcs
Reference Price
(In US Dollars)
1 pcs10 pcs100 pcs900 pcs
$2.942$2.648$2.177$1.683

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Target Price:(USD)
Quantity:
Total:
$2.942

Product parameter

Part Number TSM60NB099PW C1G Manufacturer TSC (Taiwan Semiconductor)
Description MOSFET N-CHANNEL 600V 38A TO247 Lead Free Status / RoHS Status Lead free / RoHS Compliant
Quantity Available 22957 pcs Data sheet TSM60NB099PW
Category Discrete Semiconductor Products Vgs(th) (Max) @ Id 4V @ 250µA
Vgs (Max) ±30V Technology MOSFET (Metal Oxide)
Supplier Device Package TO-247 Series -
Rds On (Max) @ Id, Vgs 99 mOhm @ 11.7A, 10V Power Dissipation (Max) 329W (Tc)
Package / Case TO-247-3 Other Names TSM60NB099PW C1G-ND
TSM60NB099PWC1G
Operating Temperature -55°C ~ 150°C (TJ) Mounting Type Through Hole
Moisture Sensitivity Level (MSL) 1 (Unlimited) Manufacturer Standard Lead Time 14 Weeks
Lead Free Status / RoHS Status Lead free / RoHS Compliant Input Capacitance (Ciss) (Max) @ Vds 2587pF @ 100V
Gate Charge (Qg) (Max) @ Vgs 62nC @ 10V FET Type N-Channel
FET Feature - Drive Voltage (Max Rds On, Min Rds On) 10V
Drain to Source Voltage (Vdss) 600V Detailed Description N-Channel 600V 38A (Tc) 329W (Tc) Through Hole TO-247
Current - Continuous Drain (Id) @ 25°C 38A (Tc)

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